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1/13 www.dynexsemi.com dk13..fw features low switching losses at high frequency. fully characterised for operation up to 20khz. applications high power inverters and choppers. ups. ac motor drives. induction heating. cycloconverters. voltage ratings ordering information when ordering, select the required part number shown in the voltage ratings selection table, then:- add k to type number for 1/2" 20 unf thread, e.g. dk13 06fwk or add m to type number for m12 thread, e.g. dk13 06fm . note: please use the complete part number when ordering and quote this number in any future correspondance relating to your order. key parameters v drm 800v i t(rms) 110a i tsm 1200a dvdt 200v/ s di/dt 200a/ s t q 10 s dk13..fw fast switching thyristor replaces july 2001 version, ds4267-4.0 ds4267-4.1 july 2002 outline type code: to94 see package details for further information. fig. 1 package outline dk13 08fw k or m dk13 06fw k or m conditions v rsm = v rrm + 100v i drm = i rrm = 15ma at v rrm or v drm & t vj type number repetitive peak voltages v drm v rrm v 800 600
2/13 www.dynexsemi.com dk13..fw surge ratings conditions t p = 10ms half sine; t case = 125 o c v r = 0% v rrm - 1/4 sine max. units symbol parameter i tsm surge (non-repetitive) on-state current i 2 ti 2 t for fusing 7.2 x 10 3 a 2 s 1.2 ka thermal and mechanical data conditions min. max. units symbol parameter - 0.24 o c/w thermal resistance - junction to case r th(j-c) mounting torque 15.0nm with mounting compound 0.08 - o c/w thermal resistance - case to heatsink r th(c-h) 125 o c t vj virtual junction temperature t stg storage temperature range reverse (blocking) - mounting torque 12.0 15.0 nm -40 150 o c - on-state (conducting) - 125 o c dc current ratings symbol parameter conditions units max. i t(av) mean on-state current i t(rms) rms value half wave resistive load, t case = 80 o c70a t case = 80 o c 110 a measurement of recovered charge - q ra1 0.5x i rr i rr q ra1 t p = 1ms i tm di r /dt measurement of q ra1 : q ra1 = i rr x t rr 2
3/13 www.dynexsemi.com dk13..fw dynamic characteristics v tm parameter symbol conditions maximum on-state voltage at 300a peak, t case = 25 o c i rrm /i drm peak reverse and off-state current at v rrm /v drm , t case = 125 o c gate source 20v, 20 ? t r < 0.5 s, t j = 125?c dv/dt maximum linear rate of rise of off-state voltage linear to 60% v drm t j = 125 o c, gate open circuit min. max. units - 2.35 v -15ma - 200 v/ s repetitive 50hz - 500 a/ s non-repetitive - 800 a/ s rate of rise of on-state current di/dt v t(to) threshold voltage at t vj = 125 o c r t on-state slope resistance at t vj = 125 o c 1.65 -v - 3.5 m ? delay time t gd -3 s total turn-on time t (on)tot - 1.5 s t j = 25?c, i t = 50a, v d = 300v, i g = 1a, di/dt =50a/ s, di g /dt = 1a/ s *typical value. i h holding current t j = 25 o c, i tm = 1a, v d = 12v 60* - ma t j = 125?c, i t = 100a, v r = 50v, dv/dt = 200v/ s (linear to 60% v drm ), di r /dt = 30a/ s, gate open circuit turn-off time t q 10 - s t q code: w gate trigger characteristics and ratings v drm = 12v, t case = 25 o c, r l = 6 ? conditions parameter symbol v gt gate trigger voltage v drm = 12v, t case = 25 o c, r l = 6 ? i gt gate trigger current v gd gate non-trigger voltage at v drm t case = 125 o c, r l = 1k ? - 3.0 v - 200 ma - 0.2 v typ. max. units v rgm peak reverse gate voltage i fgm peak forward gate current anode positive with respect to cathode p gm peak gate power p g(av) mean gate power - 5.0 v -4a -16w - 3.0 w
4/13 www.dynexsemi.com dk13..fw curves fig.2 maximum (limit) on-state characteristics fig.3 gate characteristics fig.4 typical recovered charge (for a device rated v drm = 600v, t q = 10 s)
5/13 www.dynexsemi.com dk13..fw fig.5 transient thermal impedance - junction to case fig.6 non-repetitive sub-cycle surge on-state current and i 2 t rating
6/13 www.dynexsemi.com dk13..fw notes: 1. v d 600v. 2. v r 10v. 3. r.c snubber, c = 0.22 f, r = 4.7 ? notes: 1. v d 600v. 2. v r 10v. 3. r.c snubber, c = 0.22 f, r = 4.7 ? fig.7 energy per pulse for sinusoidal pulses fig.8 maximum allowable peak on-state current vs pulse width for t case = 65?c
7/13 www.dynexsemi.com dk13..fw notes: 1. v d 600v. 2. v r 10v. 3. r.c snubber, c = 0.22 f, r = 4.7 ? notes: 1. di/dt = 25a/ s 2. v d 600v. 3. v r 10v. 4. r.c snubber, c = 0.22 f, r = 4.7 ? fig.9 maximum allowable peak on-state current vs pulse width for t case = 90?c fig.10 energy per pulse for trapezoidal pulses
8/13 www.dynexsemi.com dk13..fw notes: 1. di/dt = 25a/ s 2. v d 600v. 3. v r 10v. 4. r.c snubber, c = 0.22 f, r = 4.7 ? notes: 1. di/dt = 25a/ s 2. v d 600v. 3. v r 10v. 4. r.c snubber, c = 0.22 f, r = 4.7 ? fig.11 maximum allowable peak on-state current vs pulse width for t case = 65?c fig.12 maximum allowable peak on-state current vs pulse width for t case = 90?c
9/13 www.dynexsemi.com dk13..fw notes: 1. di/dt = 50a/ s 2. v d 600v. 3. v r 10v. 4. r.c snubber, c = 0.22 f, r = 4.7 ? notes: 1. di/dt = 50a/ s 2. v d 600v. 3. v r 10v. 4. r.c snubber, c = 0.22 f, r = 4.7 ? fig.13 energy per pulse for trapezoidal pulses fig.14 maximum allowable peak on-state current vs pulse width for t case = 65?c
10/13 www.dynexsemi.com dk13..fw notes: 1. di/dt = 50a/ s 2. v d 600v. 3. v r 10v. 4. r.c snubber, c = 0.22 f, r = 4.7 ? notes: 1. di/dt = 100a/ s 2. v d 600v. 3. v r 10v. 4. r.c snubber, c = 0.22 f, r = 4.7 ? fig.15 maximum allowable peak on-state current vs pulse width for t case = 65?c fig.16 energy per pulse for trapezoidal pulses
11/13 www.dynexsemi.com dk13..fw notes: 1. di/dt = 100a/ s 2. v d 600v. 3. v r 10v. 4. r.c snubber, c = 0.22 f, r = 4.7 ? notes: 1. di/dt = 100a/ s 2. v d 600v. 3. v r 10v. 4. r.c snubber, c = 0.22 f, r = 4.7 ? fig.17 maximum allowable peak on-state current vs pulse width for t case = 65?c fig.18 maximum allowable peak on-state current vs pulse width for t case = 90?c
12/13 www.dynexsemi.com dk13..fw package details for further package information, please contact your nearest customer service centre. all dimensions in mm, unless stated other wise. do not scale. 160 10 8 min 8 min 8.4 0.3 210 10 4 15 max 30 max hex. 27af m = m12 k = 1/2" 20 unf k = 20.6 0.6 m = 18.0 0.5 nominal weight: 120g mounting torque: 15nm 10% gate lead colour: white cathode lead colour: red package outine type code: to94
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 sales offices benelux, italy & switzerland: tel: +33 (0)1 64 66 42 17. fax: +33 (0)1 64 66 42 19. france: tel: +33 (0)2 47 55 75 52. fax: +33 (0)2 47 55 75 59. germany, northern europe, spain & rest of world: tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 north america: tel: (440) 259-2060. fax: (440) 259-2059. tel: (949) 733-3005. fax: (949) 733-2986. these offices are supported by representatives and distributors in many countries world-wide. ?dynex semiconductor 2003 technical documentation ?not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regard ing the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information con cerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully deter mine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any me dical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com datasheet annotations: dynex semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. the annota tions are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product is in design and development. the datasheet represents the product as it is understood but details may change. advance information: the product design is complete and final characterisation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification.

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